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Proceedings Paper

Deposition and properties of PLD grown RuO2 thin film
Author(s): Xiaodong Fang; Minoru Tachiki; Takeshi Kobayashi
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Paper Abstract

RuO2 thin films have been grown by the pulsed laser deposition (PLD) method. It was shown that the RuO2 thin film were (110) oriented and in-plane ordered (epitaxially grown). The electrical and optical properties of the RuO2 thin film have been measured. When grown at 700 degrees Celsius, the films exhibited resistivities as low as 39 (mu) (Omega) (DOT) cm at room temperature. The real and imaginary parts of the dielectric constant and complex refractive index for RuO2 thin films were estimated in the photon energy range from 1.5 to 4.5 eV by spectroscopic ellipsometry measurements. A transition from the valence band to the conduction band was observed for RuO2 thin films near 2.7 eV and the dependence of the refractive index on the deposition temperature was also observed.

Paper Details

Date Published: 20 February 1998
PDF: 5 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300697
Show Author Affiliations
Xiaodong Fang, Osaka Univ. (Japan)
Minoru Tachiki, Osaka Univ. (Japan)
Takeshi Kobayashi, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications

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