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Proceedings Paper

Electrical transport properties of a diode consisting of hydrogenated nanocrystalline silicon film
Author(s): Ming Liu; Hongfei Dou; Yuliang L. He; Xinliu Jiang
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Paper Abstract

The diode consisting of nano-silicon quantum dots embedded in an amorphous silicon matrix is fabricated. The discontinuous staircases on its I-V curves are observed. There are two distinct regimes on I-V curves of diode: (1) the sequential tunneling regime, where current increases monotonously with increased negative bias; (2) the resonant tunneling regime, where the current increases dramatically with increased negative bias and three quantum staircases appear. The qualitative explanation of this physical phenomenon is proposed.

Paper Details

Date Published: 20 February 1998
PDF: 3 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300690
Show Author Affiliations
Ming Liu, Beijing Univ. of Aeronautics and Astronautics (China)
Hongfei Dou, Beijing Univ. of Aeronautics and Astronautics (China)
Yuliang L. He, Beijing Univ. of Aeronautics and Astronautics (China)
Xinliu Jiang, Beijing Univ. of Aeronautics and Astronautics (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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