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Proceedings Paper

Crystalline and electrical properties of SrBi2Ta2O9 thin films prepared by laser ablation
Author(s): Yoshihiro Oishi; Yoshinori Matsumuro; Masanori Okuyama
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Paper Abstract

SrBi2Ta2O9 thin films are prepared on Pt sheets by the laser ablation method using an ArF excimer laser below 560 degrees Celsius. Crystallographic properties of the film are characterized as parameters of substrate temperature, O2 or N2O gas pressure and laser repetition frequency. SrBi2Ta2O9 thin films are oriented preferentially to (105) on Pt sheets. The depth profile of x-ray photoelectron spectra (XPS) reveals a homogeneous composition and XPS signals of Bi suggest oxygen deficiency of the film on Pt sheet. The films deposited on Pt sheet consist of spherical grains of about 100 nm diameter. D-E hysteresis loops is observed at SrBi2Ta2O9 thin film deposited on Pt sheet. The remanent polarization was 2.5 (mu) C/cm2 and coercive force was 34 kV/cm.

Paper Details

Date Published: 20 February 1998
PDF: 5 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300688
Show Author Affiliations
Yoshihiro Oishi, Osaka Univ. (Japan)
Yoshinori Matsumuro, Osaka Univ. (Japan)
Masanori Okuyama, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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