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Proceedings Paper

Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact
Author(s): Gang Shi; Zhen Sun; Geng-Fu Xu; Yun-Hao Min; Jun-Yi Luo; Yong Lu; Bing-Zong Li; Xin-Ping Qu; Gang Qian; My The Doan; Edmund Lee
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Paper Abstract

In this study, two different processes, with and without rapid thermal annealing (RTA), have been compared for the Al-Si- Cu/TiN/Ti multilayer contact on n+ diffusions. A series of wafer level reliability (WLR) measurement performed on a test structure with two 1.08 X 1.08 micrometer2 contacts on n+ diffusion. The results show that RTA can increase contact electromigration (EM) lifetime dramatically. The XRD, AES and TEM analysis indicate that this improvement is attributed to oxygen stuffing in TiN, phase change of TiN and TiSi2 formation at the interface of Ti and Si.

Paper Details

Date Published: 20 February 1998
PDF: 6 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300685
Show Author Affiliations
Gang Shi, Advanced Semiconductor Manufacturing Corp. of Shanghai (China)
Zhen Sun, Advanced Semiconductor Manufacturing Corp. of Shanghai (China)
Geng-Fu Xu, Advanced Semiconductor Manufacturing Corp. of Shanghai (China)
Yun-Hao Min, Advanced Semiconductor Manufacturing Corp. of Shanghai (China)
Jun-Yi Luo, Advanced Semiconductor Manufacturing Corp. of Shanghai (China)
Yong Lu, Advanced Semiconductor Manufacturing Corp. of Shanghai (China)
Bing-Zong Li, Fudan Univ. (China)
Xin-Ping Qu, Fudan Univ. (China)
Gang Qian, Fudan Univ. (China)
My The Doan, Northern Telecom Limited (Canada)
Edmund Lee, Northern Telecom Limited (Canada)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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