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Proceedings Paper

Pyroelectric IR sensor based on oxide heterostructures on Si(100) and LaAlO3(100) substrates
Author(s): Naijuan Wu; Y. S. Chen; S. Dordevic; Alex Ignatiev
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Paper Abstract

Uncooled infrared detectors consisting of thin film pyroelectric oxide heterostructures have been fabricated. Pb(Zr,Ti)O3 (PZT) and (Sr,Ba)Nb2O6 (BSN) thin films were integrated to YBa2Cu3O7-x (YBCO) films on yttria-stabilized zirconia (YSZ)-buffered Si(100) and on LaAlO3(100) substrates by the pulsed laser deposition technique. The YBCO thin films are used both as IR reflector- conductive electrodes and as atomic templates for PZT and BSN epitaxial growth, but not necessarily for their superconducting properties. The crystalline properties and photoresponse of the oxide thin film heterostructure infrared detectors were characterized from room temperature up to the phase transition temperatures of PZT and BSN. Detectivity values of approximately 108 cmHz1/2/W at room temperature have been obtained for simple heterostructure device configurations. The tunable phase transition temperature, dielectric constant and pyroelectric properties of the oxide allow for the development of an infrared detector with operation at temperatures higher than room temperature.

Paper Details

Date Published: 20 February 1998
PDF: 6 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300682
Show Author Affiliations
Naijuan Wu, Univ. of Houston (USA) (United States)
Y. S. Chen, Univ. of Houston (USA) (United States)
S. Dordevic, Univ. of Houston (USA) (United States)
Alex Ignatiev, Univ. of Houston (USA) (United States)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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