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Proceedings Paper

Preparation and characterization of the quantum dot quantum well system CdS/CuS/CdS
Author(s): Hongming Chen; Xinfan Huang; Hong-Bin Huang; Ling Xu; Jun Xu; Kun-Ji Chen; Duan Feng
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Paper Abstract

The synthesis and the characterization of the quantum dot quantum well (QDQW) system are described. The chemical synthesis and substitution method are used to synthesize the three-layered structure compound CdS/CuS/CdS which consists of a core of the CdS nanocrystal and a well of monolayers of CuS capped by monolayers of CdS acting as the outermost shell. The results of inductive coupled plasma mass spectroscopy (ICP-MS) measurement and the absorption spectra confirm the formation of the three-layered system CdS/CuS/CdS.

Paper Details

Date Published: 20 February 1998
PDF: 5 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300681
Show Author Affiliations
Hongming Chen, Nanjing Univ. (China)
Xinfan Huang, Nanjing Univ. (China)
Hong-Bin Huang, Nanjing Univ. (China)
Ling Xu, Nanjing Univ. (China)
Jun Xu, Nanjing Univ. (China)
Kun-Ji Chen, Nanjing Univ. (China)
Duan Feng, Nanjing Univ. (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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