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Proceedings Paper

Phosphorous-doped hydrogenated nanocrystalline silicon film prepared by PECVD
Author(s): Ming Liu; Ziou Wang; Ying Cai Pang; Yuliang L. He; Xinliu Jiang
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Paper Abstract

Phosphorous-doped nano-crystalline silicon films have been prepared by plasma enhanced chemical vapor deposition (PECVD) system. Detailed results on dark electrical conductivity, Raman spectra, infrared absorption spectra, hydrogen content are presented. The doped sample's grain size and its volume fraction is little related to doped concentration, whereas, the room-temperature conductivity of doped samples changed as doped concentration increased from 10-4 - 10-1; its value can reach to maximum value of 3.57 (Omega) -1 cm-1 when PH3/SiH4 equals 2 X 10-2. The conductivity activation energy of doped sample is smaller than that of undoped nc-Si:H film and hydrogen content is about 10 - 15%, also smaller than that of nc-Si:H film.

Paper Details

Date Published: 20 February 1998
PDF: 3 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300678
Show Author Affiliations
Ming Liu, Beijing Univ. of Aeronautics and Astronautics (China)
Ziou Wang, Beijing Univ. of Aeronautics and Astronautics and Dailian Univ. of Technology (China)
Ying Cai Pang, Hebei Univ. (China)
Yuliang L. He, Beijing Univ. of Aeronautics and Astronautics (China)
Xinliu Jiang, Beijing Univ. of Aeronautics and Astronautics (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications

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