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Proceedings Paper

Crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition
Author(s): Shuwei Li; Yongqiang Ning; Tianming Zhou; Yixin Jin; BaoLin Zhang; Hong Jiang; Yuan Tian; Guang Yuan; Fuming Jiang; Qingrui Yin; Bingyang Zhang
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Paper Abstract

Plastic flows of a large lattice-mismatch InSb epilayer on GaAs substrate grown by metalorganic chemical vapor deposition (MOCVD) were first observed by scanning electron acoustic microscopy (SEAM), and crystalline state of the buried subsurfaces was discussed. From the SEAM images in two different positions a macroscopical heterogenous distribution of large compression stress fields was studied. It was a very important result to observe and study the plastic flows by SEAM uniquely imaging mechanism.

Paper Details

Date Published: 20 February 1998
PDF: 6 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300673
Show Author Affiliations
Shuwei Li, Changchun Institute of Physics (China)
Yongqiang Ning, Changchun Institute of Physics (China)
Tianming Zhou, Changchun Institute of Physics (China)
Yixin Jin, Changchun Institute of Physics (China)
BaoLin Zhang, Changchun Institute of Physics (China)
Hong Jiang, Changchun Institute of Physics (China)
Yuan Tian, Changchun Institute of Physics (China)
Guang Yuan, Changchun Institute of Physics (China)
Fuming Jiang, Shanghai Institute of Ceramics (China)
Qingrui Yin, Shanghai Institute of Ceramics (China)
Bingyang Zhang, Shanghai Institute of Ceramics (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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