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Proceedings Paper

Interface electrical characteristics of passivation films on HgCdTe
Author(s): X. C. Zhang; Guozhen Zheng; Shaoling Guo; Yongsheng Gui; Junhao Chu
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Paper Abstract

A new passivation film: evaporated CdTe/ZnS combination film was grown on HgCdTe and the interface was characterized by capacitance-voltage (CV) characteristics of metal-insulator- semiconductor (MIS) test structures. Under proper processing conditions, the interface electrical parameters are: density of fixed charge approximately -4.0 X 1010 cm-2, density of slow state approximately 5.1 X 1010cm-2, density of fast interface state approximately 2.7 X 1011cm-2eV-1, and the time stability is good. These results show CdTe/ZnS double layer film is suitable for passivation of HgCdTe infrared detectors. We have also investigated single layer ZnS and anodic oxide/CdTe/ZnS triple layer film and found that the time stability of ZnS isn't good, and there exists too high density of fixed positive charge at the triple layer film//HgCdTe interface.

Paper Details

Date Published: 20 February 1998
PDF: 3 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300664
Show Author Affiliations
X. C. Zhang, Shanghai Institute of Technical Physics (China)
Guozhen Zheng, Shanghai Institute of Technical Physics (China)
Shaoling Guo, Shanghai Institute of Technical Physics (China)
Yongsheng Gui, Shanghai Institute of Technical Physics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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