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Proceedings Paper

Photoreflectance spectroscopy of Si surface delta doping on GaAs (001)
Author(s): Mingfang Wan; Xingquan Liu; Xiaoshuang Chen; Wei Lu; Shuechu Shen
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Paper Abstract

Photoreflectance (PR) spectroscopy system is combined with molecular beam epitaxy (MBE) to accomplish in-situ PR measuring of the Si surface (delta) doping on GaAs (001) with different concentrations at different temperatures. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic subbands in the half V-shaped potential well. We find that the Si (delta) -doping-related spectral structure first shifts to high energy side with the doping concentration increasing, then almost stop shifting with the doping concentration higher than 2.4 X 1014 cm-2 when temperature increases, at certain doping concentration the Si (delta) - doping-related transition shifts toward low energy side. The dependence of the transition on doping concentration is well explained by using a simple theoretical model.

Paper Details

Date Published: 20 February 1998
PDF: 3 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300663
Show Author Affiliations
Mingfang Wan, Shanghai Institute of Technical Physics (China), Chinese Academy of Scienc (China)
Xingquan Liu, Shanghai Institute of Technical Physics (China), Chinese Academy of Scienc (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China), Chinese Academy of Scienc (China)
Wei Lu, Shanghai Institute of Technical Physics (China), Chinese Academy of Scienc (China)
Shuechu Shen, Shanghai Institute of Technical Physics (China), Chinese Academy of Scienc (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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