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Proceedings Paper

Ion implantation in dielectric thin films for passive and active components
Author(s): Francois Flory; Laurent Roux; Stephane Tisserand; Herve Rigneault; Stephanie Robert; G. Mathieu
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Paper Abstract

The consequences of Ti implantation in silica glasses and Ta2O5 layer are studied. It is shown that the optical losses can be low with a variation of the refractive index which can be well controlled. Results on rectangular waveguides and Y junctions are given. Erbium implanted Ta2O5 layers exhibit a luminescent behavior both in the green and in the infra-red. The emission diagram of the coating can be controlled with a multilayer structure.

Paper Details

Date Published: 20 February 1998
PDF: 6 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300659
Show Author Affiliations
Francois Flory, Ecole National Superieure de Physique de Marseille (France)
Laurent Roux, Ion Beam Service (France)
Stephane Tisserand, Ecole National Superieure de Physique de Marseille (France)
Herve Rigneault, Ecole National Superieure de Physique de Marseille (France)
Stephanie Robert, Ecole National Superieure de Physique de Marseille (France)
G. Mathieu, Ion Beam Service (France)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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