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Proceedings Paper

Spectroscopic investigation of near-surface and surface quantum well structures of semiconductors
Author(s): Shuechu Shen; Xiaoshuang Chen; Wayne Wei Lu; Mingfang Wan; Xingquan Liu
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Paper Abstract

A comprehensive and spectroscopic investigation, including absorption (AB), photoluminescence (PL) and photoreflectance (PR) experiments on the electronic states and their optical transitions in some near-surface and surface quantum well structures of semiconductors are performed and reported here in this paper. The strain relaxation as a function of capping layer, the electronic states on the surface quantum well and the dependence of transition related surface Si (delta) doping on doping concentration.

Paper Details

Date Published: 20 February 1998
PDF: 7 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300637
Show Author Affiliations
Shuechu Shen, Shanghai Institute of Technical Physics and Ctr. for Advanced Studies in S (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics and Ctr. for Advanced Studies in S (China)
Wayne Wei Lu, Shanghai Institute of Technical Physics and Ctr. for Advanced Studies in S (China)
Mingfang Wan, Shanghai Institute of Technical Physics and Ctr. for Advanced Studies in S (China)
Xingquan Liu, Shanghai Institute of Technical Physics and Ctr. for Advanced Studies in S (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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