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Proceedings Paper

Native oxide technology for III-V optoelectronic devices
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Paper Abstract

This paper reviews the status of the III-V native oxide formed by steam oxidation of Al(Ga)As and its use in device fabrication. The paper presents progress on understanding the processing chemistry, material properties, and edge-emitting laser diodes, vertical-cavity surface-emitting lasers, optical waveguides, field effect transistors, and other novel device structures. Particular emphasis is placed on its use in vertical-cavity surface-emitting lasers, since to date the impact of the native oxide has been greatest for these devices.

Paper Details

Date Published: 27 January 1998
PDF: 43 pages
Proc. SPIE 10292, Heterogeneous Integration: Systems on a Chip: A Critical Review, 1029209 (27 January 1998); doi: 10.1117/12.300617
Show Author Affiliations
Dennis G. Deppe, Univ. of Texas at Austin (United States)
Diana L. Huffaker, Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 10292:
Heterogeneous Integration: Systems on a Chip: A Critical Review
Anis Husain; Mahmoud Fallahi, Editor(s)

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