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Proceedings Paper

High-temperature single-hole silicon transistors
Author(s): Nikolai T. Bagraev; Wolfgang Gehlhoff; Leonid E. Klyachkin; Anna M. Malyarenko; Alexander Naeser; Vladimir V. Romanov
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Paper Abstract

We present the first findings of the quantized conductance, EPR-EDEPR and NMR techniques which reveal the spin-dependent confinement and quantization phenomena in the silicon quantum wires created by the electrostatic ordering of the self-assembly dipole boron (B+-B-) centers. These C3v symmetry dipole impurity centers are regularly arranged along the edges of self-assembly longitudinal and lateral quantum wells (LQW and LaQW) which are naturally formed in the p+-diffusion profile inside ultra-shallow silicon n+-p+-p and n+-p+-n structures. A negative magnetoresistance that is evidence of the spin-dependent weak localization in self- assembly quantum wells at low electric fields is studied. The presence of natural quantum-size contacts inside self-assembly quantum wells is exhibited using the quantized conductance technique in weak magnetic fields.

Paper Details

Date Published: 1 January 1998
PDF: 9 pages
Proc. SPIE 3345, International Workshop on New Approaches to High-Tech Materials: Nondestructive Testing and Computer Simulations in Materials Science and Engineering, (1 January 1998); doi: 10.1117/12.299589
Show Author Affiliations
Nikolai T. Bagraev, A.F. Ioffe Physical Technical Institute (Russia)
Wolfgang Gehlhoff, Technische Univ. Berlin (Germany)
Leonid E. Klyachkin, A.F. Ioffe Physical Technical Institute (Russia)
Anna M. Malyarenko, A.F. Ioffe Physical Technical Institute (Russia)
Alexander Naeser, Technische Univ. Berlin (Germany)
Vladimir V. Romanov, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 3345:
International Workshop on New Approaches to High-Tech Materials: Nondestructive Testing and Computer Simulations in Materials Science and Engineering

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