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Proceedings Paper

GaInP/GaP quantum dots: a material for OEIC on silicon substrates
Author(s): Jong Won Lee; Alfred T. Schremer; James R. Shealy; Joseph M. Ballantyne
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Paper Abstract

Realization of optoelectronic integrated circuits on silicon substrates has many difficulties, one of which is depositing high quality light-emitting material on the silicon surface. A desirable depositing method from a manufacturing point of view is chemical vapor deposition. Because there are currently no light emitting semiconductor alloys lattice-matched to silicon, epitaxial growth of III-V compound devices on Si has required a lattice constant engineering step such as wafer bonding or thick buffer layer growth. Growth of GaInP/GaP strain-induced quantum dots offers an opportunity to grow single crystal light-emitting devices monolithically on silicon substrates without lattice constant engineering steps, since single crystal GaP can be grown on silicon. In this presentation, progress on MOCVD growth of GaInP/GaP quantum dots and its device applications are reviewed.

Paper Details

Date Published: 22 December 1997
PDF: 12 pages
Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); doi: 10.1117/12.298246
Show Author Affiliations
Jong Won Lee, Cornell Univ. (United States)
Alfred T. Schremer, Cornell Univ. (United States)
James R. Shealy, Cornell Univ. (United States)
Joseph M. Ballantyne, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 3290:
Optoelectronic Integrated Circuits II
Shih-Yuan Wang; Yoon-Soo Park, Editor(s)

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