Share Email Print
cover

Proceedings Paper

Edge-emitting quantum well laser with integrated intracavity electrostatic gate
Author(s): Reginald K. Lee; Yuan Jian Xu; John D. O'Brien; Oskar J. Painter; Axel Scherer; Amnon Yariv
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Ridge waveguide, edge-emitting single quantum well GaAs lasers with an integrated gating electrode have been fabricated. These devices integrate a MESFET structure with the laser PN junction so that the SBD (Schottky barrier diode) depletion layer can be used for transverse current confinement in the laser. Device fabrication was very simple requiring only an anisotropic etch for waveguide definition followed by a single self-aligned contact deposition step. The Schottky barrier depletion layers on either side of the ridge waveguide act to confine free carriers. This structure allows for separation of the optical and electrical confinement in the transverse direction without requiring complex fabrication. The device demonstrated modulation of the pulsed lasing threshold with gate control voltage on a 30 micron wide ridge. Above threshold, increasing power output with increasing gate voltage was demonstrated with negligible gate current. The multimode lasing spectrum showed that the increased power output occurred for all modes with no shift in the mode wavelengths to within the resolution of the measurement system.

Paper Details

Date Published: 22 December 1997
PDF: 9 pages
Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); doi: 10.1117/12.298238
Show Author Affiliations
Reginald K. Lee, California Institute of Technology (United States)
Yuan Jian Xu, California Institute of Technology (United States)
John D. O'Brien, Univ. of Southern California (United States)
Oskar J. Painter, California Institute of Technology (United States)
Axel Scherer, California Institute of Technology (United States)
Amnon Yariv, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 3290:
Optoelectronic Integrated Circuits II
Shih-Yuan Wang; Yoon-Soo Park, Editor(s)

© SPIE. Terms of Use
Back to Top