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Proceedings Paper

Gas source molecular beam growth of multiple quantum well modulators, detectors, and avalanche photodiodes at 1.55 μm
Author(s): John E. Cunningham; William Jan; Keith W. Goossen; Joseph Earl Ford; R. N. Pathak; G. Zhang
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Paper Abstract

We demonstrate the performance of InGaAs/InP multiple quantum well modulators for fiber access applications. On/off contrast ratios in reflectivity are 22:1 with a 10:1 level extending over a 26 nm bandwidth at 1.55 micrometers. Arrays of high quality pin InGaAs with low dark and zero bias operation are realized and further applied to avalanche photodiodes.

Paper Details

Date Published: 22 December 1997
PDF: 15 pages
Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); doi: 10.1117/12.298237
Show Author Affiliations
John E. Cunningham, Lucent Technologies/Bell Labs. (United States)
William Jan, Lucent Technologies/Bell Labs. (United States)
Keith W. Goossen, Lucent Technologies/Bell Labs. (United States)
Joseph Earl Ford, Lucent Technologies/Bell Labs. (United States)
R. N. Pathak, Lucent Technologies/Bell Labs. (United States)
G. Zhang, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 3290:
Optoelectronic Integrated Circuits II
Shih-Yuan Wang; Yoon-Soo Park, Editor(s)

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