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Proceedings Paper

Electroabsorption multiple quantum well modulators for high-frequency applications
Author(s): William S. C. Chang; Kwok Kwong Loi; Hsin Hsing Liao; Justin Hannah Hodiak; Paul K. L. Yu; Peter M. Asbeck
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Paper Abstract

External modulation of cw laser radiation by multiple quantum well electroabsorption modulators will potentially play an important role in rf photonic links, especially at high microwave frequencies and millimeter waves. InAsP/GaInP MQW on InP and GaInAs/InAlAs MQW on GaAs modulators have been grown by MBE and fabricated into p-i-n modulators. Performance with -26 dB link efficiency without amplification, 5 dB insertion loss, 15 mW of optical power and 17 GHz bandwidth has been experimentally demonstrated. Extension to 100 GHz bandwidth with -39 dB link efficiency (without amplification) can be expected. Traveling wave modulators and on-chip impedance matching of p-i-n modulators have been designed, fabricated and evaluated. Traveling wave modulators with flat frequency response over 40 GHz have been experimentally demonstrated.

Paper Details

Date Published: 22 December 1997
PDF: 15 pages
Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); doi: 10.1117/12.298235
Show Author Affiliations
William S. C. Chang, Univ. of California/San Diego (United States)
Kwok Kwong Loi, Univ. of California/San Diego (United States)
Hsin Hsing Liao, Univ. of California/San Diego (United States)
Justin Hannah Hodiak, Univ. of California/San Diego (United States)
Paul K. L. Yu, Univ. of California/San Diego (United States)
Peter M. Asbeck, Univ. of California/San Diego (United States)


Published in SPIE Proceedings Vol. 3290:
Optoelectronic Integrated Circuits II
Shih-Yuan Wang; Yoon-Soo Park, Editor(s)

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