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Proceedings Paper

Visible electroluminescence from pulsed-laser-annealed a-Si:H/a-SiNx:H superlattices on silicon wafer
Author(s): Mingxiang Wang; Xinfan Huang; Wei Li; Jun Xu; Kun-Ji Chen; Qimin Wang
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Paper Abstract

Plasma enhanced chemical vapor deposited a-Si:H/a-SINx:H superlattices on silicon wafers were annealed by KrF excimer pulsed laser. Room temperature visible electroluminescence (EL) was successfully realized from these silicon-based superlattices structures with quite low threshold biased value 3.0V. It is a promising new way, in which all procedures are compatible with current silicon ULSI technology, to the realization of opto-electronic devices different from the porous silicon. Luminescent properties of samples with different laser annealing energy densities were compared and a preferred annealing condition was given.

Paper Details

Date Published: 12 January 1998
PDF: 6 pages
Proc. SPIE 3278, Integrated Optic Devices II, (12 January 1998); doi: 10.1117/12.298218
Show Author Affiliations
Mingxiang Wang, Nanjing Univ. (China)
Xinfan Huang, Nanjing Univ. (China)
Wei Li, Nanjing Univ. (China)
Jun Xu, Nanjing Univ. (China)
Kun-Ji Chen, Nanjing Univ. (China)
Qimin Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3278:
Integrated Optic Devices II
Giancarlo C. Righini; S. Iraj Najafi; Bahram Jalali, Editor(s)

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