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Proceedings Paper

MBE growth kinetics and thermal stability of Si1-x-yGexCy/Si heterostructures
Author(s): Michael W. Dashiell; Leonid V. Kulik; Dmitry A. Hits; James Kolodzey
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Paper Abstract

Bandgap tailoring and lattice-matching in SiGeC/Si heterostructures has potential for improving the performance and capabilities of Si based optoelectronics. Although remarkable progress in the molecular beam epitaxy (MBE) of SiGeC/Si heterostructures has been achieved, important questions concerning growth kinetics and thermal stability are still not fully understood. One major obstacle during MBE growth of these heterostructures may be the high surface diffusivity of carbon, which leads to small fractions of substitutional carbon at temperatures necessary for device quality epitaxial growth. We report on the surface kinetic properties of Si0.992C0.008/Si and thermal stability of strained Si0.992C0.008/Si and strain compensated Si0.892Ge0.10C0.008/Si alloys were shown to be more stable then the binary Si0.992C0.008/Si heterostructure alloys.

Paper Details

Date Published: 12 January 1998
PDF: 8 pages
Proc. SPIE 3278, Integrated Optic Devices II, (12 January 1998); doi: 10.1117/12.298210
Show Author Affiliations
Michael W. Dashiell, Univ. of Delaware (United States)
Leonid V. Kulik, Univ. of Delaware (United States)
Dmitry A. Hits, Univ. of Delaware (United States)
James Kolodzey, Univ. of Delaware (United States)


Published in SPIE Proceedings Vol. 3278:
Integrated Optic Devices II
Giancarlo C. Righini; S. Iraj Najafi; Bahram Jalali, Editor(s)

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