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Proceedings Paper

Proximity effect correction on MEBES for 1x mask fabrication: lithography issues and tradeoffs at 0.25 micron
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Paper Abstract

Proximity effect correction is necessary to fabricate masks with 0.25 micron design rules using electron beam lithography. The GHOST technique of proximity correction has the advantage of no pattern preprocessing and is easily implemented on a raster scan system such as MEBES. Recent results show proximity corrected features at 0.3 micron. To minimize constraints on the resist characteristics, such as the Srg ratio, global sizing of patterns has been investigated and found to provide an additional degree of freedom to control sensitivities and process latitude. Simulation and experimental results will be presented to demonstrate the use of GHOST and sizing for 1X mask making, including discussion of some of the relevant issues and tradeoffs.

Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1496, 10th Annual Symp on Microlithography, (1 March 1991); doi: 10.1117/12.29744
Show Author Affiliations
Andrew J. Muray, Etec Systems, Inc. (United States)
Robert L. Dean, Etec Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 1496:
10th Annual Symp on Microlithography
James N. Wiley, Editor(s)

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