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Proceedings Paper

Theory study for the energy gap change in a semiconductor induced by an intense laser pulse
Author(s): Zhonghua Shen; Jian Lu; Xiao-Wu Ni
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Paper Abstract

In this paper, by solving the equation for the density of the nonequilibrium carriers (NEC), taking into account laser generation, the linear and auger recombination and diffusion, we have obtained the excited electron-hole plasma density. A model is developed to calculate the effect of the plasma on the gap between the conduction band and valence band.

Paper Details

Date Published: 12 December 1997
PDF: 4 pages
Proc. SPIE 3173, Ultrahigh- and High-Speed Photography and Image-based Motion Measurement, (12 December 1997); doi: 10.1117/12.294511
Show Author Affiliations
Zhonghua Shen, Nanjing Univ. of Science and Technology (China)
Jian Lu, Nanjing Univ. of Science and Technology (China)
Xiao-Wu Ni, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 3173:
Ultrahigh- and High-Speed Photography and Image-based Motion Measurement
C. Bruce Johnson; Andrew Davidhazy; James S. Walton; Takeharu Goji Etoh; C. Bruce Johnson; Donald R. Snyder; James S. Walton, Editor(s)

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