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Proceedings Paper

Measurement of thermal expansion coefficient of poly-Si using microgauge sensors
Author(s): Jung Hun Chae; Jae-Youl Lee; Sang Won Kang
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Paper Abstract

Thermal expansion coefficient of heavily doped LPCVD polycrystalline thin film was extracted by microgauge sensors. When electrical power was applied to the microgauge, it was heated up and thermal expansion occurred. From the relation between applied current and measured displacement at the microgauge, thermal expansion coefficient of thin film was extracted. The results revealed a value of 2.9 X 10-6 /K of thermal expansion coefficient of highly doped poly-Si thin films with standard deviation of 0.24 X 10-6 /K.

Paper Details

Date Published: 14 November 1997
PDF: 10 pages
Proc. SPIE 3242, Smart Electronics and MEMS, (14 November 1997); doi: 10.1117/12.293562
Show Author Affiliations
Jung Hun Chae, Korea Advanced Institute of Science and Technology (South Korea)
Jae-Youl Lee, Korea Advanced Institute of Science and Technology (South Korea)
Sang Won Kang, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 3242:
Smart Electronics and MEMS
Alex Hariz; Vijay K. Varadan; Olaf Reinhold, Editor(s)

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