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Proceedings Paper

Bandgap engineered materials for quantum effect optoelectronic devices
Author(s): Petar B. Atanackovic
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Paper Abstract

Epitaxial growth techniques allow the precise growth of ultra thin semiconductor heterojunctions. The wave particle duality of electrons in such materials can be fully exploited in designing tailor made optical and electronic properties. The basic theory of electronic and optical properties of quantum wells described for the lattice matched GaAs/AlGaAs system. Optical modulation using the quantum confined Stark effect in p-i-n diodes and n-i-n phototransistors is described. Calculations showing the unique valence band warping effects in strained layer CdTe/CdZnTe quantum wells is presented. A CdTe/CdZnTe n-i-n optoelectronic device is described and performance discussed.

Paper Details

Date Published: 14 November 1997
PDF: 11 pages
Proc. SPIE 3241, Smart Materials, Structures, and Integrated Systems, (14 November 1997); doi: 10.1117/12.293486
Show Author Affiliations
Petar B. Atanackovic, Defence Science and Technology Organisation (Australia)


Published in SPIE Proceedings Vol. 3241:
Smart Materials, Structures, and Integrated Systems
Alex Hariz; Vijay K. Varadan; Olaf Reinhold, Editor(s)

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