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Proceedings Paper

Optical thin films using LPCVD and thermal reoxidation techniques
Author(s): HanChieh Chao; Y. T. Wu; Wei-Chung Wang
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Paper Abstract

A VLSI fabrication technique by using LPCVD to deposit polysilicon films and then reoxidized it back to specific oxide and polysilicon multilayer stacks has been studied and evaluated. Thermal oxide films are much more stable than PECVD oxide films both in optical and electrical response. Also, the NOX films has been examined and simulated for the related purpose.

Paper Details

Date Published: 1 October 1997
PDF: 4 pages
Proc. SPIE 3133, Optical Thin Films V: New Developments, (1 October 1997); doi: 10.1117/12.290195
Show Author Affiliations
HanChieh Chao, National Dong Hwa Univ. (Taiwan)
Y. T. Wu, National Dong Hwa Univ. (Taiwan)
Wei-Chung Wang, National Dong Hwa Univ. (United States)

Published in SPIE Proceedings Vol. 3133:
Optical Thin Films V: New Developments
Randolph L. Hall, Editor(s)

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