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Proceedings Paper

Mechanical properties of dielectric thin films
Author(s): Herve Rigneault; Christine Mahodaux; Hugues Giovannini; Ludovic Escoubas; Paul Moretti
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Paper Abstract

Stress in thin films deposited by Reactive Low-Voltage Ion Plating is studied in air and at room temperature. A multilayer stack, composed of tantalum pentoxide and silicon dioxide layers, is considered and the interactions layer to layer turn out to have no effect as regards to the final bending. Evolution in stress after annealing shows the possibility to reduce the stress as well as the absorption for tantalum pentoxide thin films. Finally, ion implementation, such as helium and xenon, at high energy, prove to be also a way to vary and diminish the stress in thin films.

Paper Details

Date Published: 1 October 1997
PDF: 7 pages
Proc. SPIE 3133, Optical Thin Films V: New Developments, (1 October 1997); doi: 10.1117/12.290191
Show Author Affiliations
Herve Rigneault, Ecole Nationale Superieure de Physique de Marseille (France)
Christine Mahodaux, Ecole Nationale Superieure de Physique de Marseille (France)
Hugues Giovannini, Ecole Nationale Superieure de Physique de Marseille (France)
Ludovic Escoubas, Ecole Nationale Superieure de Physique de Marseille (France)
Paul Moretti, Univ. Claude Bernard de Lyon I (France)


Published in SPIE Proceedings Vol. 3133:
Optical Thin Films V: New Developments
Randolph L. Hall, Editor(s)

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