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Proceedings Paper

X-ray diffraction analysis of crystallization of SbxSey thin films
Author(s): Haifei Bao; Shuichi Ye; Baohong Yuan; Mujie Lan; Shiren Zhou; Qi L. Wang
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Paper Abstract

Chalcogenide alloys SbxSey are being applied to phase-change, reversible optical storage. The non- stoichiometric compound are researched displaying their interesting phenomena before and after anneal in a furnace, which were characterized by the X-ray diffraction technology. The composition of the Se richer than Sb will result the film in amorphous state in the room temperature evaporation. The Sb2Se3 crystallized out from the non-stoichiometric alloys have the lower crystallization temperature compared with the stoichiometric alloys Sb2Se3. Double layers consisting of Sb film deposited on Se film was investigated which revealed its special characteristics. The sublimation and the diffusion of the atoms during annealing in the lower temperature have the important effects on the material's crystallization behavior, the great kinetic energy of the atoms will result in the crystallization of Se and Sb2Se3 and, the lower crystallization temperature is just what we expected in the laser recording and for the optical-data storage. An important conclusion can be made from the experiments, the crystallization can be finished by adjacent atomic diffusion. The reason for optical crystallization is also discussed.

Paper Details

Date Published: 1 October 1997
PDF: 7 pages
Proc. SPIE 3133, Optical Thin Films V: New Developments, (1 October 1997); doi: 10.1117/12.290189
Show Author Affiliations
Haifei Bao, Harbin Institute of Technology (China)
Shuichi Ye, Harbin Institute of Technology (China)
Baohong Yuan, Harbin Institute of Technology (China)
Mujie Lan, Harbin Institute of Technology (China)
Shiren Zhou, Harbin Institute of Technology (China)
Qi L. Wang, Harbin Institute of Technology (China)

Published in SPIE Proceedings Vol. 3133:
Optical Thin Films V: New Developments
Randolph L. Hall, Editor(s)

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