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Proceedings Paper

Laser diode response to gamma and proton radiation
Author(s): Kamala S. Krishnan; W. David Smith; Joel M. Hatch
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Paper Abstract

Commercial InGaAsP laser diodes were tested for radiation-induced changes in their characteristics when irradiated by gamma and proton radiation at several temperatures. The spectral output, threshold current and frequency response of the laser diodes were measured as a function of dose while maintaining the devices at the three temperatures, 71°C, near ambient and -30°C during the exposures. The laser diodes showed small changes to the threshold current under radiation but in general were resistant to the radiations. The details of the experiments and the temperature dependence observed are presented and the comparative effects of gamma and proton radiation are discussed.

Paper Details

Date Published: 17 October 1997
PDF: 12 pages
Proc. SPIE 3124, Photonics for Space Environments V, (17 October 1997); doi: 10.1117/12.290139
Show Author Affiliations
Kamala S. Krishnan, Ceridian Corp. (United States)
W. David Smith, Ceridian Corp. (United States)
Joel M. Hatch, SRICO Inc. (United States)

Published in SPIE Proceedings Vol. 3124:
Photonics for Space Environments V
Edward W. Taylor, Editor(s)

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