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Proceedings Paper

Photodiodes for high-frequency applications implemented in CMOS and BiCMOS processes
Author(s): Pasi J. M. Palojaervi; Tarmo Ruotsalainen; Juha Tapio Kostamovaara; Grigory S. Simin
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Paper Abstract

In this paper the high frequency behavior of integrated pn- photodiodes is discussed and measurement results of two different types of photodiodes, one implemented in a standard 1.2 micrometers BiCMOS process and the other in a 0.8 micrometers CMOS process are presented. The rise times and responsivities of the photodiodes are under 5 ns and 0.26 A/W in the CMOS process and about 30 ns and 0.23 A/W in the BiCMOS process, respectively. Furthermore, the suitability of the technique for 3D vision has been investigated by designing an array of photodetectors and measuring the isolation between detector blocks.

Paper Details

Date Published: 25 September 1997
PDF: 8 pages
Proc. SPIE 3100, Sensors, Sensor Systems, and Sensor Data Processing, (25 September 1997); doi: 10.1117/12.287732
Show Author Affiliations
Pasi J. M. Palojaervi, Univ. of Oulu (Finland)
Tarmo Ruotsalainen, Univ. of Oulu (Finland)
Juha Tapio Kostamovaara, Univ. of Oulu (Finland)
Grigory S. Simin, A.F. Ioffe Physico-Technical Institute (United States)


Published in SPIE Proceedings Vol. 3100:
Sensors, Sensor Systems, and Sensor Data Processing
Otmar Loffeld, Editor(s)

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