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Proceedings Paper

Unique case study of low yield analysis of 1.5-um BiCMOS technology
Author(s): C. S. Teoh; James Lin
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Paper Abstract

A BiCMOS device which was having low yield problem at sort was systematically analyzed. In this case the failure was delaying shipment and pressure ofreducing analysis time was extremely high. This paper presents a method employed to quickly identify the failure signature and localize the defect to a minimum area of the device. The physical defect, silicon fault/dislocation, found by TEM has been fully characterized and reported in this paper. It is believed that the information presented in this paper will be helpful for failure analysis and product personnel. Emission microscopy system since its creation in 1980's, has dramatically demonstrated its ability to reduce failure analysis cycle time by providing qualitative evidence of the suspected failure. Together with other failure analysis techniques such as OBIC, TEM etc. can put failure analysis to its full capability. This paper describes in details and demonstrates a successful application of the emission microscope to pinpoint the location of a dislocation defect that caused C-E leakage in a NPNtransistor. Both frontside and backside emission were performed and will be discussed in the paper. A quick sample preparation for backside emission is proposed.

Paper Details

Date Published: 11 September 1997
PDF: 9 pages
Proc. SPIE 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III, (11 September 1997); doi: 10.1117/12.284703
Show Author Affiliations
C. S. Teoh, National Semiconductor Sdn. Bhd. (Malaysia)
James Lin, National Semiconductor Corp. (United States)

Published in SPIE Proceedings Vol. 3216:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III
Ali Keshavarzi; Sharad Prasad; Hans-Dieter Hartmann, Editor(s)

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