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Proceedings Paper

Arc-induced gate oxide breakdown in plasma etching process
Author(s): Jungwoo Song; Heegee Lee; Jung Hoon Lee
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Paper Abstract

Arc induced gate oxide breakdown in a plasma etching process was observed and its mechanism was analyzed in this paper. The gate oxide was broken during the poly4 etching process and the poly4 layer is O.8um high from the gate(polyl) layer. Since the broken gate oxide points were found scattered surrounding the arc occurrence point, it is assumed that excessively high electric field be generated near arc occurrence point, making the gate oxide broken. Generally, pattern deterioration by heavy ion bombardment has been observed around the arc point and believed to be the cause of low yields when arc phenomena occurs in the plasma etching process. It is found that any arc occurrence could cause dies to fail by breaking the gate oxide, even if the deteriorated pattern is not concerned with the active die circuits.

Paper Details

Date Published: 11 September 1997
PDF: 6 pages
Proc. SPIE 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III, (11 September 1997); doi: 10.1117/12.284697
Show Author Affiliations
Jungwoo Song, Hyundai Electronics Industries Co., Ltd. (South Korea)
Heegee Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)
Jung Hoon Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3216:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III
Ali Keshavarzi; Sharad Prasad; Hans-Dieter Hartmann, Editor(s)

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