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Proceedings Paper

Statistical effects of plasma etch damage on hot-carrier degradation
Author(s): Bharat L. Bhuva; Vijay Janapaty; N. Bui; Sherra E. Kerns
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Paper Abstract

During plasma etch steps, devices are exposed directly to plasma and charge collection/deposition onto aluminum or poly damage gate oxides. This damage results in higher subsequent hot-carrier degradation. Here, the statistical variations in waler-level hot-carrier degradations are investigated. Interface-trap formation is shown to be independent of antenna size across a wafer, while bulk oxide trapping center density is found to be highly dependent on the antenna size and type.

Paper Details

Date Published: 11 September 1997
PDF: 5 pages
Proc. SPIE 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III, (11 September 1997); doi: 10.1117/12.284696
Show Author Affiliations
Bharat L. Bhuva, Vanderbilt Univ. (United States)
Vijay Janapaty, Vanderbilt Univ. (United States)
N. Bui, Advanced Micro Devices, Inc. (United States)
Sherra E. Kerns, Vanderbilt Univ. (United States)


Published in SPIE Proceedings Vol. 3216:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III
Ali Keshavarzi; Sharad Prasad; Hans-Dieter Hartmann, Editor(s)

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