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Proceedings Paper

Room-temperature luminescence diagnostics in polycrystalline silicon
Author(s): Yaroslav Koshka; Sergei Ostapenko; Lubek Jastrzebski; J. Cao; Juris P. Kalejs
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Paper Abstract

Improvement of recombination properties is observed in EFG microcrystalline Si wafers subjected to consecutive solar cell processing steps. A dramatic increase of room- temperature band-to-band photoluminescence (PL) intensity (hvmax equals 1.1 eV) by a factor of two orders of magnitude occurs in the solar cell, to demonstrate a significant reduction in non-radiative recombination during the upgrading steps that benefit solar cell efficiency. Using spatially resolved PL mapping over 100 cm2 wafers, we study PL behavior in solar cell fabrication. We compared point-by-point PL mapping with distribution of minority carrier diffusion length in the same poly-Si wafer. A correlation between PL intensity and the diffusion length is documented using a statistically valid data-base. It is suggested that room-temperature PL mapping can be used for on-line monitoring of poly-Si solar cell quality.

Paper Details

Date Published: 2 September 1997
PDF: 8 pages
Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); doi: 10.1117/12.284686
Show Author Affiliations
Yaroslav Koshka, Univ. of South Florida (United States)
Sergei Ostapenko, Univ. of South Florida (United States)
Lubek Jastrzebski, Univ. of South Florida (United States)
J. Cao, ASE Americas, Inc. (United States)
Juris P. Kalejs, ASE Americas, Inc. (United States)


Published in SPIE Proceedings Vol. 3215:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing
Damon K. DeBusk; Sergio A. Ajuria, Editor(s)

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