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Proceedings Paper

Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique
Author(s): Yi Ma; J. L. Lee; Janet Benton; T. Boone; David J. Eaglesham; G. S. Higashi
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Paper Abstract

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

Paper Details

Date Published: 2 September 1997
PDF: 8 pages
Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); doi: 10.1117/12.284683
Show Author Affiliations
Yi Ma, Lucent Technologies Bell Labs. (United States)
J. L. Lee, Lucent Technologies Bell Labs. (United States)
Janet Benton, Lucent Technologies Bell Labs. (United States)
T. Boone, Lucent Technologies Bell Labs. (United States)
David J. Eaglesham, Lucent Technologies Bell Labs. (United States)
G. S. Higashi, Lucent Technologies Bell Labs. (United States)


Published in SPIE Proceedings Vol. 3215:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing
Damon K. DeBusk; Sergio A. Ajuria, Editor(s)

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