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Proceedings Paper

Rapid in-fab monitoring of ion implant doses using total x-ray fluorescence
Author(s): Cornelia A. Weiss; Tim Z. Hossain; Ehrenfried Zschech; Brian J. MacDonald
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Paper Abstract

Total reflection X-ray fluorescence (TXRF) is a useful tool for rapid, nondestructive monitoring of implant doses in semiconductor manufacturing. For As-doped (10 keV and 80 keV) Si wafers with an implant dose of 3 X 1015 at/cm2, As fluorescence yield and accumulated As+ dose measured by Secondary Ion Mass Spectroscopy (SIMS) have been compared. This comparison between TXRF and SIMS demonstrates the power of TXRF as a new nondestructive technique for in-line shallow implant dose and profile monitoring.

Paper Details

Date Published: 2 September 1997
PDF: 9 pages
Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); doi: 10.1117/12.284675
Show Author Affiliations
Cornelia A. Weiss, AMD Saxony Manufacturing GmbH (United States)
Tim Z. Hossain, Advanced Micro Devices, Inc. (United States)
Ehrenfried Zschech, AMD Saxony Manufacturing GmbH (Germany)
Brian J. MacDonald, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3215:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing
Damon K. DeBusk; Sergio A. Ajuria, Editor(s)

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