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Proceedings Paper

Cyclic I-V and Q-V: new measurement techniques for monitoring processes and processing-induced damage
Author(s): Murat Okandan; Stephen J. Fonash; James Werking
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Paper Abstract

A new measurement technique for process monitoring that consists of observing current or charge transients after each voltage step during cyclic voltage sweeps is presented. This technique provides a quick turn-around alternative to monitoring with full-flow CMOS devices since it uses simple ultrathin oxide MOS structures. Analysis of the resulting cyclic I-V and Q-V data provides important physical information about the status of the ultrathin oxide, the interface and the near surface Si region.

Paper Details

Date Published: 2 September 1997
PDF: 10 pages
Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); doi: 10.1117/12.284670
Show Author Affiliations
Murat Okandan, The Pennsylvania State Univ. (United States)
Stephen J. Fonash, The Pennsylvania State Univ. (United States)
James Werking, SEMATECH (United States)


Published in SPIE Proceedings Vol. 3215:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing
Damon K. DeBusk; Sergio A. Ajuria, Editor(s)

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