Share Email Print
cover

Proceedings Paper

In-line charge-trapping characterization of dielectrics for sub-0.5-um CMOS technologies
Author(s): Pradip K. Roy; Carlos M. Chacon; Yi Ma; Gregory Horner
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The advent of ultra-large and giga-scale-integration (ULSI/GSI) has placed considerable emphasis on the development of new gate oxides and interlevel dielectrics capable of meeting strict performance and reliability requirements. The costs and demands associated with ULSI fabrication have in turn fueled the need for cost-effective, rapid and accurate in-line characterization techniques for evaluating dielectric quality. The use of non-contact surface photovoltage characterization techniques provides cost-effective rapid feedback on dielectric quality, reducing costs through the reutilization of control wafers and the elimination of processing time. This technology has been applied to characterize most of the relevant C-V parameters, including flatband voltage (Vfb), density of interface traps (Dit), mobile charge density (Qm), oxide thickness (Tox), oxide resistivity (pox) and total charge (Qtot) for gate and interlevel (ILO) oxides. A novel method of measuring tunneling voltage by this technique on various gate oxides is discussed. For ILO, PECVD and high density plasma dielectrics, surface voltage maps are also presented. Measurements of near-surface silicon quality are described, including minority carrier generation lifetime, and examples of their application in diagnosing manufacturing problems.

Paper Details

Date Published: 2 September 1997
PDF: 14 pages
Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); doi: 10.1117/12.284669
Show Author Affiliations
Pradip K. Roy, Lucent Technologies Bell Labs. (United States)
Carlos M. Chacon, Lucent Technologies Bell Labs. (United States)
Yi Ma, Lucent Technologies Bell Labs. (United States)
Gregory Horner, Keithley Instruments (United States)


Published in SPIE Proceedings Vol. 3215:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing
Damon K. DeBusk; Sergio A. Ajuria, Editor(s)

© SPIE. Terms of Use
Back to Top