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Proceedings Paper

Thermal stability of PECVD W-B-N thin film as a diffusion barrier
Author(s): YongTae Kim; Dong Joon Kim; Chang Woo Lee; Jong-Wan Park
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Paper Abstract

Effects of boron and nitrogen on electrical and metallurgical properties of plasma enhanced chemical vapor deposition W-B-N thin film have been investigated. These impurities keep the W-B-N thin film in a nanostructured amorphous phase and provide a stuffing effect that is very effective for preventing the fast diffusion of Cu atoms during a high temperature annealing process. The resistivity of the amorphous W-N and W-B-N thin films is attainable between 140 and 153 (mu) (Omega) -cm by controlling a B10H14/NH3 flow ratio. XRD, Nomarski microscope, RBS, and TEM analysis show that the W-N and W-B-N barriers do not react with Si during an annealing in Ar ambient at 800 - 900 degree(s)C for 30 min and prevent interdiffusion of the Cu atom at 800 approximately 850 degree(s)C for 30 min, which is the best result regarding to the thermal stability of the diffusion barrier. An electromigration test for a SiO2/W-N/Al interconnect reveals that a medium time to failure is 2 times that of SiO2/TiN/Al schemes.

Paper Details

Date Published: 5 September 1997
PDF: 9 pages
Proc. SPIE 3214, Multilevel Interconnect Technology, (5 September 1997); doi: 10.1117/12.284664
Show Author Affiliations
YongTae Kim, Korea Institute of Science and Technology (South Korea)
Dong Joon Kim, Korea Institute of Science and Technology and Hanyang Univ. (South Korea)
Chang Woo Lee, Kookmin Univ. (South Korea)
Jong-Wan Park, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 3214:
Multilevel Interconnect Technology
Divyesh N. Patel; Mart Graef, Editor(s)

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