Share Email Print
cover

Proceedings Paper

Integrated arc suppression unit for defect reduction in PVD applications
Author(s): Jason Li; Murali K. Narasimhan; Vikram Pavate; David Loo; Steve Rosenblum; Larry Trubell; Richard Scholl; Scott Seamons; Chris Hagerty; Sesh Ramaswami
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Arcing between the target and plasma during PVD deposition causes substantial damage to the target and splats and other contamination on the deposited films. Arc-related damages and defects are frequently encountered in microelectronics manufacturing and contributes largely to reduced wafer yields. Arcing is caused largely by the charge buildup at the contaminated sites on the target surface that contains either nonconducting inclusions or nodules. Arc suppression is a key issue for defect reduction, yield improvement and for reliable high quality metallization. An Integrated Arc Suppression Unit (IASU) has been designed for Endura HP PVDTM sputtering sources. The integrated design reduces cable length from unit to source and reduces electrical energy stored in the cable. Active arc handling mode, proactive arc prevention mode, and passive by-pass arc counting mode are incorporated into the same unit. The active mode is designed to quickly respond to chamber conditions, like a large chamber voltage drop, that signals a arc. The self run mode is designed to proactively prevent arc formation by pulsing and reversing target voltage at 50 kHz. The design of the IASU, also called mini small package arc repression circuit--low energy unit (mini Sparc-le), has been optimized for various DC magnetron sources, plasma stability, chamber impedance, power matching, CE MARK test, and power dissipation. Process characterization with Ti, TiN and Al sputtering indicates that the unit has little adverse impact on film properties. Mini Sparc-le unit has been shown here to significantly reduce splats occurrence in Al sputtering. Marathon test of the unit with Ti/TiN test demonstrated the unit's reliability and its ability to reduce sensitivity of defects to target characteristics.

Paper Details

Date Published: 5 September 1997
PDF: 9 pages
Proc. SPIE 3214, Multilevel Interconnect Technology, (5 September 1997); doi: 10.1117/12.284662
Show Author Affiliations
Jason Li, Applied Materials, Inc. (United States)
Murali K. Narasimhan, Applied Materials, Inc. (United States)
Vikram Pavate, Applied Materials, Inc. (United States)
David Loo, Applied Materials, Inc. (United States)
Steve Rosenblum, Advanced Energy (United States)
Larry Trubell, Advanced Energy (United States)
Richard Scholl, Advanced Energy (United States)
Scott Seamons, Applied Materials, Inc. (United States)
Chris Hagerty, Applied Materials, Inc. (United States)
Sesh Ramaswami, Applied Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 3214:
Multilevel Interconnect Technology
Divyesh N. Patel; Mart Graef, Editor(s)

© SPIE. Terms of Use
Back to Top