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Proceedings Paper

Statistical design of experimental analysis of TiN films deposited by ion metal plasma PVD for sub-0.25-um IC process applications
Author(s): Simon Hui; Ken Ngan; Murali K. Narasimhan; John Forster
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Paper Abstract

A Vectra IMPTM (Ion Metal Plasma) source was used to deposit TiN films for application such as W plug liner and Al wetting layer. The process is based on conventional magnetron sputtering with the addition of a higher density, inductively coupled RF plasma between the sputtering cathode and the substrate. This new technology enables deposition of the films into deep submicron contacts with >50% bottom coverage. In addition to enhancing step coverage of metal films, such as Ti and TiN, this process also has significant effects on the materials properties of the films. The film properties of the TiN films were studied as a function of the fundamental process parameters, namely DC target power, RF coil power, and chamber process pressure, using statistical DOE technique. The study shows that a high degree of control over the film properties can be obtained in the IMP process.

Paper Details

Date Published: 5 September 1997
PDF: 5 pages
Proc. SPIE 3214, Multilevel Interconnect Technology, (5 September 1997); doi: 10.1117/12.284659
Show Author Affiliations
Simon Hui, Applied Materials, Inc. (United States)
Ken Ngan, Applied Materials, Inc. (United States)
Murali K. Narasimhan, Applied Materials, Inc. (United States)
John Forster, Applied Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 3214:
Multilevel Interconnect Technology
Divyesh N. Patel; Mart Graef, Editor(s)

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