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Proceedings Paper

Study of wetting properties of Ti/TiN liners deposited by ion metal plasma PVD for low-temperature sub-0.25-um Al fill technology
Author(s): Simon Hui; Ken Ngan; Murali K. Narasimhan; Barry Hogan; Gongda Yao; Sesh Ramaswami
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Paper Abstract

Ti/TiN liners deposited with Vectra IMPTM (Ion Metal Plasma) PVD technology can be used as wetting layers to lower the temperature of Al planarization. The Ti/TiN liners can also be used to improve the texture and morphology of the Al overlayer. An experimental investigation was performed to study the impact of the IMP PVD process on the wetting properties of the Ti/TiN films. The Ti/TiN underlayers and the Al overlayer were studied for film morphology and texturing using AFM, XRD, and TEM techniques. It was found that the IMP Ti/TiN process can be used to control and optimize the fill capabilities of low temperature Al planarization. Parameters such as process pressure, bias, process temperature of the IMP Ti and TiN process as well as the wetting layer thickness have significant effects on the grain size, reflectivity, crystal orientation, and surface roughness of the aluminum films. Al films with high reflectivity, low roughness and hyper texturing (< 1 degree(s) FWHM) have been obtained with the integration of IMP Ti/TiN liner module with a low temperature Al planarization module. The fill capability of this integrated process exceeds that of the conventional high temperature Al planarization process at the Via level for a sub 0.25 micrometers IC process.

Paper Details

Date Published: 5 September 1997
PDF: 5 pages
Proc. SPIE 3214, Multilevel Interconnect Technology, (5 September 1997); doi: 10.1117/12.284653
Show Author Affiliations
Simon Hui, Applied Materials, Inc. (United States)
Ken Ngan, Applied Materials, Inc. (United States)
Murali K. Narasimhan, Applied Materials, Inc. (United States)
Barry Hogan, Applied Materials, Inc. (United States)
Gongda Yao, Applied Materials, Inc. (United States)
Sesh Ramaswami, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 3214:
Multilevel Interconnect Technology
Divyesh N. Patel; Mart Graef, Editor(s)

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