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Proceedings Paper

Verifying and preventing recurrence in metal defects for VLSI manufacturing
Author(s): Hsun-Peng Lin; Chih-Hsiung Lee; Yi-Chuan Lo; Chi-Horng Liao; Kuo-Liang Lu
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Paper Abstract

This paper provides several guides for solving or reducing metal defect from sputter stage, photo stage and etch stage. Particles from three stages were detected with KLA inspection and EDX component analysis tool. According to all evidence, the final results point out the criteria of various type defects in this paper. Specially, in our experiment, we get some obvious results, such as solving the resist gel mechanism in TEL coating track; reducing the splashing particle defect in TEL developer track; reducing particle for the new cleaning method in etching machine (dry 8330); reducing particle during the wafer transferring from ADI (photo) to AEI (etch).

Paper Details

Date Published: 25 August 1997
PDF: 12 pages
Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); doi: 10.1117/12.284649
Show Author Affiliations
Hsun-Peng Lin, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chih-Hsiung Lee, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Yi-Chuan Lo, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chi-Horng Liao, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Kuo-Liang Lu, Taiwan Semiconductor Manufacturing Co. (Taiwan)


Published in SPIE Proceedings Vol. 3213:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III
Abe Ghanbari; Anthony J. Toprac, Editor(s)

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