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Proceedings Paper

Real-time control of etching processes: experimental results
Author(s): Jordan M. Berg; Ted K. Higman; Allen R. Tannenbaum
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Paper Abstract

A unified approach to the modeling, simulation, and control of thin film processing is presented. The focus of this approach is to combine in-situ sensing with a model that deals directly with evolving surfaces. Using this method, and an in-situ process modeling technique (e.g., plasma emission spectroscopy during reactive ion etching) is used as a source of in/out data for a model which deals exclusively with interface evolution. In this way, in-situ monitoring gives predictive process control capability, rather than simple end-point detection.

Paper Details

Date Published: 25 August 1997
PDF: 12 pages
Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); doi: 10.1117/12.284645
Show Author Affiliations
Jordan M. Berg, Texas Tech Univ. (United States)
Ted K. Higman, Univ. of Minnesota/Twin Cities (United States)
Allen R. Tannenbaum, Univ. of Minnesota/Twin Cities (United States)


Published in SPIE Proceedings Vol. 3213:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III
Abe Ghanbari; Anthony J. Toprac, Editor(s)

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