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Proceedings Paper

Comparison of best process focus and machine focus
Author(s): Yi-Chuan Lo; Chih-Hsiung Lee; Yang-Tung Fan; Chih-Kung Chang; Kuo-Liang Lu
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Paper Abstract

The focus window of various topographies and substrate (borophosphosilicategass, plasma enhanced oxide and Al/Si/Cu) is discussed in this paper. Also the electric test data and Cp yield with different focus are introduced. Finally, the usable depth of focus, auto focus system and simulation model are applied to describe the difference between machine and process best focus.

Paper Details

Date Published: 25 August 1997
PDF: 8 pages
Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); doi: 10.1117/12.284644
Show Author Affiliations
Yi-Chuan Lo, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chih-Hsiung Lee, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Yang-Tung Fan, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chih-Kung Chang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Kuo-Liang Lu, Taiwan Semiconductor Manufacturing Co. (Taiwan)


Published in SPIE Proceedings Vol. 3213:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III
Abe Ghanbari; Anthony J. Toprac, Editor(s)

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