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Proceedings Paper

Narrow-channel transistor threshold self-adjustment technique for ULSI with LOCOS isolation
Author(s): Konstantin V. Loiko; Igor V. Peidous; Hok-Min Ho; John F. Bromley-Barratt; Elgin T. Quek; David Hsuan Yu Lim
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Paper Abstract

A method for the compensation of the narrow-width effect of local oxidation and the self-adjustment of the narrow-channel transistor threshold voltage is proposed. The method enables the significant improvement of the device characteristics and isolation performance.

Paper Details

Date Published: 27 August 1997
PDF: 3 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284615
Show Author Affiliations
Konstantin V. Loiko, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Igor V. Peidous, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Hok-Min Ho, Chartered Semiconductor Manufacturing Ltd. (Singapore)
John F. Bromley-Barratt, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Elgin T. Quek, Chartered Semiconductor Manufacturing Ltd. (Singapore)
David Hsuan Yu Lim, Chartered Semiconductor Manufacturing Ltd. (Singapore)


Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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