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Proceedings Paper

Boron segregation in As-implanted Si due to electric field and transient enhanced diffusion
Author(s): Ruey-Dar Chang; P. S. Choi; Dirk Wristers; P. K. Chu; Dim-Lee Kwong
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Paper Abstract

Boron segregation toward implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It is found that both the implant damage created by the arsenic implantation and arsenic deactivation enhance the diffusion of the embedded boron layer toward the shallow As implanted profile. This phenomena was found in both 650 degree Celsius furnace annealed (FA) and 1000 degree Celsius rapid thermally annealed (RTA) samples. For the 650 degree Celsius FA sample, the boron segregation peak was found located at the junction formed by implanted As, where residual dislocation loops at the original amorphous/crystalline (A/C) interface was also observed. However, no A/C interface dislocation loops were found to be present for the RTA samples. Additional anomalous boron segregation was observed for the 1000 degree Celsius RTA plus 750 degree Celsius FA samples. The additional boron segregation is not correlated with defect layers. It is, therefore, concluded that the anomalous boron segregation is caused by the electric field resulting from the formation of p-n junction.

Paper Details

Date Published: 27 August 1997
PDF: 8 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284604
Show Author Affiliations
Ruey-Dar Chang, Univ. of Texas/Austin (United States)
P. S. Choi, Univ. of Texas/Austin (United States)
Dirk Wristers, Advanced Micro Device (United States)
P. K. Chu, City Univ. of Hong Kong (Hong Kong)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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