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Proceedings Paper

Hot-carrier degradation for deep-submicron N-MOSFETs introduced by back-end processing
Author(s): Donald Y. C. Lie; Wei Xia; Jiro Yota; Atul B. Joshi; R. Zwingman; R. Williams; V. Kerametlian; Dennis Cerney; Byoung Woon Min; Dim-Lee Kwong
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Paper Abstract

Severe hot-carrier-induced device lifetime degradation has been observed on deep submicron N-MOSFETs after they are processed through the backend for multi-layer-metal interconnect. Our experimental data show that the hot-carrier lifetime degradation is dependent on: (1) H2 annealing/sintering time; (2) choice of inter-metal-dielectric process, i.e., spin-on-glass (SOG) or high-density-plasma chemical-vapor-deposition (HDP-CVD) process; and (3) choice of pre-metal-dielectric process, i.e., BPSG (borophosphosilicate glass) or BPTEOS/O3 (borophosphosilicate-tetra-ethoxy- silane and ozone oxide) deposition. The device hot-carrier lifetime can degrade more than 50% due to prolonged H2 sintering time, and it could easily degrade by a order of magnitude when HDP-CVD oxide, instead of SOG, is used for inter-metal dielectric deposition. The gate oxide always remains of excellent quality through the entire backend processing, which indicate that the degradation is not caused by plasma damage to the gate oxide but by hydrogen-related defects at the Si-SiO2 interface instead.

Paper Details

Date Published: 27 August 1997
PDF: 10 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284599
Show Author Affiliations
Donald Y. C. Lie, Rockwell Corp. (United States)
Wei Xia, Rockwell International Corp. (United States)
Jiro Yota, Rockwell International Corp. (United States)
Atul B. Joshi, Rockwell International Corp. (United States)
R. Zwingman, Rockwell International Corp. (United States)
R. Williams, Rockwell International Corp. (United States)
V. Kerametlian, Rockwell International Corp. (United States)
Dennis Cerney, Rockwell International Corp. (United States)
Byoung Woon Min, Univ. of Texas/Austin (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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