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Proceedings Paper

Low-threshold 0.6-um MOSFET for low-voltage rf applications
Author(s): Andrej Litwin; Christian Nystroem; Karl Fagerholm
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Paper Abstract

Results are reported on the high-frequency characteristics of low threshold MOSFET in an LNA (low noise amplifier) for 900 MHz applications. It is shown that an excellent noise figure NF of 1.2 dB, together with good input related IP3 equals 11 dBm and power gain Ap equals 13 dB, can be obtained in a 3.3 V CMOS 0.6 micrometer process. NFmin showed to be constant over a wide current range, making it possible to achieve optimum total LNA performance.

Paper Details

Date Published: 27 August 1997
PDF: 9 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284592
Show Author Affiliations
Andrej Litwin, Ericsson Components (Sweden)
Christian Nystroem, Ericsson Radio Systems AB (Sweden)
Karl Fagerholm, Royal Institute of Technology (Sweden)


Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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