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Proceedings Paper

Scaling self-aligned contacts for 0.25-um and below
Author(s): Asanga H. Perera; Jim R. Pfiester; Tom Lii; Chris Feng; Mousumi Bhat; Thuy Dao; John Molloy; Michael Blackwell; Joe Cecil
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Paper Abstract

Self-aligned contacts (SAC) have been successfully scaled down to 0.2 tm, for high speed SRAM fabrication at the 64Mb density level. All factors affecting SAC contact resistance (Re) are investigated in depth to reduce the overall resistance of SACs. For a 0.25x0.45 im2 poly/n contact a contact resistance of 65 (1 =8 has been obtained. The factors which allow SACs to enable fabrication technologies at and below the 0.25 im size scale, are discussed.

Paper Details

Date Published: 27 August 1997
PDF: 5 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284590
Show Author Affiliations
Asanga H. Perera, Motorola (United States)
Jim R. Pfiester, Hewlett-Packard Co. (United States)
Tom Lii, Motorola (United States)
Chris Feng, Semiconductor Technology Lab. (United States)
Mousumi Bhat, Motorola (Singapore)
Thuy Dao, Semiconductor Technology Lab. (United States)
John Molloy, Semiconductor Technology Lab. (United States)
Michael Blackwell, Motorola (United States)
Joe Cecil, Motorola (United States)

Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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