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Proceedings Paper

Applications of silicon-germanium-carbon in MOS and bipolar transistors
Author(s): Sanjay K. Banerjee
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Paper Abstract

This paper will review growth of Si-Ge and Si-Ge-C alloys using various low thermal budget epitaxial schemes such as UHVCVD, RTPCVD and MBE. The growth issues, materials aspects and bandgap and strain engineering in these alloys will be discussed. The prospective of using these alloys in strained-channel Si-Ge MOSFETs and MODFETs in order to enhance CMOS in the giga-scale era will be discussed. We will also describe the use of these films in Si-Ge HBTs for high speed r-f type applications.

Paper Details

Date Published: 27 August 1997
PDF: 11 pages
Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); doi: 10.1117/12.284583
Show Author Affiliations
Sanjay K. Banerjee, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 3212:
Microelectronic Device Technology
Mark Rodder; Toshiaki Tsuchiya; David Burnett; Dirk Wristers, Editor(s)

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